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FS10AS-3
High-Speed Switching Use Nch Power MOS FET
REJ03G1407-0200 (Previous: MEJ02G0111-0101) Rev.2.00 Aug 07, 2006
Features
* * * * * Drive voltage : 10 V VDSS : 150 V rDS(ON) (max) : 170 m ID : 10 A Integrated Fast Recovery Diode (TYP.) : 100 ns
Outline
RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A)
2, 4 4
1 12 3
1. 2. 3. 4.
Gate Drain Source Drain
3
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Ratings 150 20 10 40 10 10 40 35 - 55 to +150 - 55 to +150 0.32 Unit V V A A A A A W C C g Conditions VGS = 0 V VDS = 0 V
L = 100 H
Typical value
Rev.2.00
Aug 07, 2006
page 1 of 6
FS10AS-3
Electrical Characteristics
(Tch = 25C)
Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min 150 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- 3.0 122 0.61 12 1250 175 75 25 30 60 34 1.0 -- 100 Max -- 0.1 0.1 4.0 170 0.85 -- -- -- -- -- -- -- -- 1.5 3.57 -- Unit V A mA V m V S pF pF pF ns ns ns ns V C/W ns Test Conditions ID = 1 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 80 V, ID = 5 A, VGS = 10 V, RGEN = RGS = 50 IS = 5 A, VGS = 0 V Channel to case IS = 10 A, dis/dt = -100 A/s
Rev.2.00
Aug 07, 2006
page 2 of 6
FS10AS-3
Performance Curves
Power Dissipation Derating Curve
50 3 2
Maximum Safe Operating Area
Power Dissipation PD (W)
Drain Current ID (A)
40
30
102 7 5 3 2 101 7 5 3 2
tw
=
10
s
0 10
s
20
C D
10
0
0
50
100
150
200
100 7 Tc = 25C 5 Single Pulse 3 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
Case Temperature Tc (C)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
10
VGS = 20V 10V 7V 6V
Output Characteristics (Typical)
5
VGS = 20V 10V 7V 6V
Tc = 25C Pulse Test
Tc = 25C Pulse Test
Drain Current ID (A)
Drain Current ID (A)
8
4
5V
6
3
4
5V
2
2
1
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Drain-Source On-State Voltage VDS(ON) (V)
Drain-Source On-State Resistance rDS(ON) (m)
On-State Voltage vs. Gate-Source Voltage (Typical)
2.0
ID = 15A
On-State Resistance vs. Drain Current (Typical)
200
Tc = 25C Pulse Test
160
VGS = 10V 20V
1.6
1.2
10A
120
0.8
5A
80
0.4
40 0
Tc = 25C Pulse Test
0 0 4 8 12 16 20
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00
Aug 07, 2006
page 3 of 6
FS10AS-3
Forward Transfer Admittance vs. Drain Current (Typical)
Forward Transfer Admittance | yfs | (S)
103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
Transfer Characteristics (Typical)
20
Drain Current ID (A)
16
Tc = 25C VDS = 10V Pulse Test
VDS = 10V Pulse Test
Tc = 25C 75C 125C
12
8
4
0
0
4
8
12
16
20
Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical)
104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101
Coss Crss
Drain Current ID (A)
Switching Characteristics (Typical)
103 7 5 4 3 2 102 7 5 4 3 2 101 0 10
Capacitance C (pF)
Ciss
Switching Time (ns)
Tch = 25C VDD = 80V VGS = 10V RGEN = RGS = 50
td(off) tf td(on) tr
Tch = 25C f = 1MHz VGS = 0V
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
2 3 4 5 7 101
2 3 4 5 7 102
Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical)
20 20
Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical)
VGS = 0V Pulse Test
Gate-Source Voltage VGS (V)
Tch = 25C ID = 10A
16
VDS = 50V 80V 100V
Source Current IS (A)
16
Tc = 125C 75C 25C
12
12
8
8
4
4
0
0
10
20
30
40
50
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.2.00
Aug 07, 2006
page 4 of 6
FS10AS-3
On-State Resistance vs. Channel Temperature (Typical)
101 7 5 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150
Drain-Source On-State Resistance rDS(ON) (25C)
Gate-Source Threshold Voltage VGS(th) (V)
Drain-Source On-State Resistance rDS(ON) (tC)
Threshold Voltage vs. Channel Temperature (Typical)
5.0
VGS = 10V ID = 5A Pulse Test
VDS = 10V ID = 1mA
4.0
3.0
2.0
1.0
0
-50
0
50
100
150
Channel Temperature Tch (C)
Channel Temperature Tch (C)
Drain-Source Breakdown Voltage V(BR)DSS (25C)
Transient Thermal Impedance Zth(ch-c) (C/W)
Drain-Source Breakdown Voltage V(BR)DSS (tC)
Breakdown Voltage vs. Channel Temperature (Typical)
1.4
Transient Thermal Impedance Characteristics
101 7 5 D = 1.0 3 0.5 2 100 7 0.1 5 3 2 10-1 7 5 3 2
0.2
VGS = 0V ID = 1mA
1.2
1.0
0.8
0.05 0.02 0.01 Single Pulse
PDM
tw T D= tw T
0.6
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102
Channel Temperature Tch (C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor
Switching Waveform
90%
RGEN
10% 10% 10%
90% td(on) tr
90% td(off) tf
Rev.2.00
Aug 07, 2006
page 5 of 6
FS10AS-3
Package Dimensions
Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code MASS[Typ.] 0.32g
Unit: mm
1 0.2
6.6 5.3 0.2
2.3 0.5 0.2
6.1 0.2
10.4Max
0.1 0.1
1Max
2.5Min
0.76 0.2
0.76
0.5 0.2 2.3 0.2
2.3
Order Code
Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name - T +Direction (1 or 2) +3 Standard order code example FS10AS-3-T13 FS10AS-3
75 Type name Plastic Magazine (Tube) Note: Please confirm the specification about the shipping in detail.
Rev.2.00
Aug 07, 2006
page 6 of 6
1
1.4 0.2
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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